| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide: a novel multilayer wiring film which allows wet-etching to be performed with stability, and can meet the condition that an electrode or wiring film be low reflection, which is a requirement for increasing the display quality of a high-definition plane display device; and a Ni alloy sputtering target material to form a Ni alloy film making a low-reflection interlayer film.SOLUTION: A multilayer wiring film has a laminate structure, and comprises: an interlayer film formed on a transparent substrate or a transparent substrate with a transparent film formed thereon, made of a Ni alloy, and having a thickness of 20-100 nm; and a conductive film formed directly over the interlayer film and having a specific resistance of 150μΩcm or less. In the multilayer wiring film, the visible light reflection coefficient measured from the side of the transparent substrate is 20% or less.</p> |
