MANUFACTURING METHOD OF LIGHT-EMITTING STRUCTURE

摘要

A manufacturing method of a light-emitting structure is provided. The manufacturing method comprises the following steps. Firstly, a light-emitting die is formed on a carrier substrate carrier substrate, wherein the light-emitting die comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer in order, and has an electrode hole passing through the second type semiconductor layer, the light-emitting layer and a part of the first type semiconductor layer. Next, a current blocking layer covering an inner sidewall of the electrode hole is formed. Then, a current spreading layer covering the current blocking layer is formed, wherein the current spreading layer is separated from the inner sidewall by the current blocking layer. Then, the current blocking layer covering the inner sidewall of the electrode hole is removed.

主权项

1. A manufacturing method of a light-emitting structure, comprising:
providing a carrier substrate; forming a light-emitting die on the carrier substrate, wherein the light-emitting die comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer formed on the carrier substrate in order, the light-emitting die has an electrode hole passing through the second type semiconductor layer, the light-emitting layer and a part of the first type semiconductor layer, and the electrode hole has an inner sidewall exposing a lateral surface of each of the first type semiconductor layer, the light-emitting layer and the second type semiconductor layer; forming a first current blocking layer covering the inner sidewall; forming a second current blocking layer on the second type semiconductor layer; forming a current spreading layer covering the first current blocking layer and the second current blocking layer, wherein the current spreading layer is separated from the inner sidewall of the electrode hole by the first current blocking layer; forming a patterned current spreading layer covering the second current blocking layer; removing the first current blocking layer covering the inner sidewall of the electrode hole; forming a first electrode on the first type semiconductor layer exposed from the electrode hole; and forming a second electrode on the patterned current spreading layer.