NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

摘要

　This nitride semiconductor device includes: a nitride semiconductor substrate having a non-polar surface or a semipolar surface as a primary surface for crystalline growth; and a drift layer formed on the nitride semiconductor substrate, the drift layer having a GaN layer and an Al-containing layer comprising an Al-containing nitride semiconductor, the drift layer comprising a nitride semiconductor laminate structure in which the GaN layer and the Al-containing layer are laminated along the c axis or an axis inclined by 30° or less with respect thereto.