| 摘要 |
<p>The present invention provides a method of manufacturing a FinFET, comprising: a. providing a substrate (100), a fin (200), and a pseudo-gate stack (500); b. performing ion injection on the semiconductor structure, and forming a source/drain extension region (202); c. performing ion injection on the semiconductor structure, and forming a diffusion blocking region (203), where a position of a peak concentration value in the diffusion blocking region (203) is consistent with the source/drain extension region (202), that is, an error in a depth direction of a source/drain does not exceed 5 nm; d. forming sidewalls (505) on two sides of the pseudo-gate stack (500); e. forming a source/drain region in the substrate on the two sides of the sidewall and performing annealing, and forming an interlayer dielectric layer (450); and f. removing the pseudo-gate stack (500) to form a pseudo-gate vacancy, and depositing a gate stack layer (600) in the pseudo-gate vacancy. The method for inhibiting uneven diffusion in a source/drain doped region according to the present invention effectively improves device performance without increasing processing complexity.</p> |
