发明名称 |
A METHOD OF POLISHING A SUBSTRATE HAVING A FILM ON A SURFACE OF THE SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING |
摘要 |
A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate. |
申请公布号 |
US2015111314(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201514589988 |
申请日期 |
2015.01.05 |
申请人 |
EBARA CORPORATION |
发明人 |
IIZUMI Takeshi;WATANABE Katsuhide;KOBAYASHI Yoichi |
分类号 |
H01L21/321;B24B49/12;H01L21/67;B24B37/013;H01L21/66;H01L21/3105 |
主分类号 |
H01L21/321 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Tokyo JP |