A MULTIFERRO-HETEROSTRUCTURE COMPOSITION HAVING TUNABLE MAGNETIC COUPLING AT ROOM TEMPERATURE

摘要

A ferromagnetic/ferroelectric heterostructure thin film is disclosed that exhibits significant magneto-electric coupling. The ferromagnetic/ferroelectric heterostructure thin film includes a) a base layer of silicon substrate, b) a first copper layer deposited on the silicon substrate, c) a first iron layer deposited on the copper layer, d) first aluminum layer deposited on the first iron layer, e) a polymer layer exhibiting ferroelectric properties deposited on the first aluminum layer, f) a second aluminum layer deposited on the polymer layer; g) a second iron layer deposited on the second aluminum layer, and h) a second copper layer deposited on the second iron layer.

主权项

1. A ferromagnetic/ferroelectric heterostructure thin film exhibiting significant magneto-electric coupling, comprising:
a. a base layer of silicon substrate; b. a first copper layer deposited on the silicon substrate; c. a first iron layer deposited on the copper layer; d. a first aluminum layer deposited on the first iron layer; e. a polymer layer exhibiting ferroelectric properties deposited on the first aluminum layer; f. a second aluminum layer deposited on the polymer layer; g. a second iron layer deposited on the second aluminum layer; and h. a second copper layer deposited on the second iron layer.