发明名称 |
SILICON CARBIDE EPITAXIAL WAFER, AND PREPARATION METHOD THEREOF |
摘要 |
According to an embodiment, there is provided a method of fabricating an epitaxial wafer, which includes preparing a wafer in a susceptor; and growing an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer includes supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. According to an embodiment, there is provided a silicon carbide epitaxial wafer which includes a silicon carbide wafer; and a silicon carbide epitaxial layer on the silicon carbide wafer wherein a surface defect formed on the silicon carbide epitaxial layer is 1 ea/cm2 or less. |
申请公布号 |
US2015108493(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201314404374 |
申请日期 |
2013.05.28 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
Kang Seok Min |
分类号 |
H01L21/02;H01L29/16 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating an epitaxial wafer, the method comprising:
preparing a wafer in a susceptor; and growing a-silicon-cubicle an epitaxial layer on the wafer, wherein the growing of the epitaxial layer on the wafer comprises: supplying a raw material into the susceptor; growing the epitaxial layer on the wafer at a first growth rate; and growing the epitaxial layer on the wafer at a second growth rate higher than the first growth rate. |
地址 |
Seoul KR |