| 摘要 |
The present invention provides a silicon carbide semiconductor device in which channel resistance is reduced and the reliability of a gate insulating film is increased. The present invention is provided with the following: a trench (3) formed in a portion of the surface layer of an epitaxial layer (2); a well layer (4) formed along the side surfaces and the bottom surface of the trench; a source region (5) formed in the surface layer of the well layer, on the bottom surface of the trench; a gate insulating film (7); and a gate electrode (8). The gate insulating film is formed along a side surface of the trench, and one end of the gate insulating film reaches the source region. The gate electrode is formed along the side surface of the trench and is formed on the gate insulating film. |
