发明名称 IGCT MODULE WITH DIVIDED GATE LAYER
摘要 <p>A module (10) for a semiconductor switch (16) comprises a circuit board (12), a semiconductor switch (16) carried by the circuit board (12), wherein the semiconductor switch (16) has a disc-like shape with two opposite faces (18) and a border (20), which provides a gate contact area (24) to a gate of the semiconductor switch (16), a gate unit (22) with circuitry carried by the circuit board (12), wherein the gate unit (22) is adapted for controlling the gate of the semiconductor switch (16) with at least one output (38) to be connected to the gate, and a gate layer (26) provided on the circuit board (12) and electrically interconnecting the gate contact area (24) on the border (20) of the semiconductor switch (16) with the at least one output (38) of the gate unit (22). The gate layer (26) is divided in at least two slices (26a, 26b) laying side by side on the circuit board (12) and providing at least two paths for an electrical current between the gate contact area (24) and the gate unit (22).The at least two slices (26a, 26b) contact the at least one output (38) of the gate unit (22) with lateral contact sections (32a, 32b) that are aligned on the circuit board (12) on one side of the semiconductor switch (16).Moreover, a method for switching a semiconductor switch (16) of a module (10)is mentioned.</p>
申请公布号 WO2015055376(A1) 申请公布日期 2015.04.23
申请号 WO2014EP69994 申请日期 2014.09.19
申请人 ABB TECHNOLOGY AG 发明人 COTTET, DIDIER;STIASNY, THOMAS
分类号 H01L25/18;H03K17/12;H03K17/51 主分类号 H01L25/18
代理机构 代理人
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