IMPROVED JUNCTION FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a junction field effect transistor that is reduced in gate leakage current.SOLUTION: A junction field effect transistor 10 includes: a back gate 20; a channel 12; a top gate 22; and a drain 16 and a source 14 in a current flow with the channel 12. A method of forming the junction field effect transistor includes selecting the dimension of a first channel 12.1 between the top gate 22 and the back gate 20 such that a significant current flow path in the channel 12 occurs in a region of relatively low electric field strength. Channel dimensions are selected so that a current flow path in a first channel region 12.1 between the top gate 22 and the back gate 20 substantially aligns with a current flow path in a second channel region 12.2 between the top gate 22 and the drain 16.