| 发明名称 |
METHOD OF SELECTIVELY REMOVING SILICON NITRIDE AND ETCHING APPARATUS THEREOF |
| 摘要 |
A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided. |
| 申请公布号 |
US2015111311(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314056673 |
申请日期 |
2013.10.17 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANGCHIEN Ying-Hsueh;Lee Yu-Ming;Yang Chi-Ming |
| 分类号 |
H01L21/311;H01L21/67;H01L21/66 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of selectively removing silicon nitride, comprising:
providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, wherein the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. |
| 地址 |
Hsinchu TW |
