MONOLITHIC THREE DIMENSIONAL (3D) INTEGRATED CIRCUITS (ICs) (3DICs) WITH VERTICAL MEMORY COMPONENTS, RELATED SYSTEMS AND METHODS

摘要

Monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) with vertical memory components are disclosed. A 3D memory crossbar architecture with tight-pitched vertical monolithic intertier vias (MIVs) for inter-block routing and multiplexers at each tier for block access is used to shorten overall conductor length and reduce resistive-capacitive (RC) delay. Elimination of such long crossbars reduces the RC delay of the crossbar and generally improves performance and speed. Further, elimination of the long horizontal crossbars makes conductor routing easier. The MIVs, with their small run-length, can work without the need for repeaters (unlike the long crossbars), and control logic may be used to configure the memory banks based on use.

主权项

1. A three dimensional (3D) integrated circuit (IC) (3DIC), comprising:
a memory structure comprising:
a plurality of tiers, each tier having a memory cell;a plurality of monolithic intertier vias (MIVs) spanning the plurality of tiers;a first multiplexer disposed in a first tier among the plurality of tiers and coupled to at least a respective memory cell within the first tier of the plurality of tiers;a second multiplexer disposed in a second tier among the plurality of tiers and coupled to at least a second respective memory cell within the second tier of the plurality of tiers; andcontrol logic configured to determine which, if any, memory cells are active and reconfigure usage of memory cells based on such determination.