| 发明名称 |
INTEGRATED CRACKSTOP |
| 摘要 |
A method including forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate, forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure, and forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer. The method may further include forming a second dielectric layer above the metallic liner, and forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer. |
| 申请公布号 |
US2015108645(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314059486 |
申请日期 |
2013.10.22 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Daubenspeck Timothy H.;Gambino Jeffrey P.;Muzzy Christopher D.;Sauter Wolfgang |
| 分类号 |
H01L21/768;H01L23/00;H01L23/48 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first dielectric layer above a conductive pad and above a metallic structure, the conductive pad and the metallic structure are each located within an interconnect level above a substrate; forming a first opening and a second opening in the first dielectric layer, the first opening is aligned with and exposes the conductive pad and the second opening is aligned with and exposes the metallic structure; forming a metallic liner on the conductive pad, on the metallic structure, and above the first dielectric layer; forming a second dielectric layer above the metallic liner; and forming a third dielectric layer above the second dielectric layer, the third dielectric layer is thicker than either the first dielectric layer or the second dielectric layer. |
| 地址 |
Armonk NY US |
