METHOD PROVIDING AN EPITAXIAL PHOTONIC DEVICE HAVING A REDUCTION IN DEFECTS AND RESULTING STRUCTURE

摘要

A method of forming a photonic device and resulting structure are described in which the photonic device is epitaxially grown over a substrate surface vertically, and laterally over trench isolation regions formed in the substrate surface.

主权项

1. A photonic structure comprising:
a semiconductor substrate comprising spaced trench isolation regions; an epitaxial photonic device formed over and in contact with the spaced trench isolation regions such that side edges of the photonic device extend over the spaced trench isolation regions.