| 发明名称 |
Power Semiconductor Devices, Structures, and Related Methods |
| 摘要 |
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types. |
| 申请公布号 |
US2015108565(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414523492 |
申请日期 |
2014.10.24 |
| 申请人 |
MaxPower Semiconductor, Inc. |
发明人 |
Darwish Mohamed N.;Zeng Jun;Blanchard Richard A. |
| 分类号 |
H01L29/78;H01L29/40 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
San Jose CA US |
