HIGH ELECTRON MOBILITY TRANSISTOR

摘要

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer having a 2-dimensional electron gas (2DEG), a channel supply layer on the channel layer, a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer, at least one channel depletion layer on the channel supply layer; a gate electrode on at least a part of the channel depletion layer, and at least one bridge connecting the channel depletion layer and the source electrode. The channel depletion layer is configured to form a depletion region in the 2DEG. The HEMT has a ratio of a first impedance to a second impedance that is a uniform value. The first impedance is between the gate electrode and the channel depletion layer. The second impedance is between the source electrode and the channel depletion layer.

主权项

1. A high electron mobility transistor (HEMT) comprising:
a channel layer having a 2-dimensional electron gas (2DEG); a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a channel depletion layer on the channel supply layer, the channel depletion layer configured to form a depletion region in the 2DEG; a gate electrode on at least a part of the channel depletion layer; and at least one bridge connecting the channel depletion layer to the source electrode, the HEMT having a ratio of a first impedance to a second impedance being a uniform value, the first impedance being between the gate electrode and the channel depletion layer, the second impedance being between the source electrode and the channel depletion layer.