LIGHT EMITTING DIODE

摘要

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. A light extraction layer with a roughened structure is formed on the doped semiconductor layer to improve the light emitting efficiency of LED. Furthermore, the strength of the semiconductor stacked structure can be enhanced by the light extraction layer, to improve the reliability of the LED and the production yields of manufacturing process.

主权项

1. A light emitting diode, comprising:
a semiconductor stacked structure, comprising:
a first semiconductor layer;a second semiconductor layer, stacked with the first semiconductor layer; anda light emitting layer, disposed between the first semiconductor layer and the second semiconductor layer; a substrate, carrying the semiconductor stacked structure and facing the second semiconductor layer; a first electrode, disposed between the second semiconductor layer and the substrate and electrically connected to the second semiconductor layer and the substrate; a second electrode, disposed on the first semiconductor layer; and an outer light extraction layer, disposed on the first semiconductor layer, wherein the outer light extraction layer forms a roughened structure, and a light refractive index of the outer light extraction layer is less than a light refractive index of the first semiconductor layer.