| 摘要 |
PROBLEM TO BE SOLVED: To generate high density plasma in a microwave ion source.SOLUTION: A microwave ion source 10 includes a plasma chamber 12 which includes a micro wave introduction unit 16, an ion extraction unit 18, and a sidewall 20 connecting the micro wave introduction unit 16 and ion extraction unit 18 so as to surround a plasma generation space 14. at least one of the sidewall 20 and ion extraction unit 18 includes a secondary electron emission material layer 50 having an exposure surface to the plasma generation space 14, and irregularities are formed on the exposure surface at least partially. |
