| 摘要 |
<PICT:1108741/C6-C7/1> A method of producing an epitaxial layer of semi-conductor material on a semi-conductor substrate comprises bringing vaporized semi-conductor material into contact with a liquid phase region, produced by alloying the substrate material with a metal on a face of the substrate, so that semi-conductor material is deposited from the region. Si, Ge or Ge-Si alloy is deposited on one of these materials alloyed with Au, Ag, Cu, Al, or Sb. In a chamber 3 under a vacuum of e.g. 10-5mm Hg a cleaned Si wafer 1 is heated to 500-600 DEG C. by an electric heater 7 and gold from a boat 6 evaporated to form a 100</>rA thick layer on the lower face 4 of the wafer, which at this temperature forms a liquid phase alloy. The wafer is raised to 1208 DEG C. and silicon 5 evaporated by electron beam heating by a gun 8 on to the liquid phase surface. The Si is incorporated into the region and is deposited therefrom on to the substrate. The wafer is cooled and the liquid phase region crystallizes and may be removed by lapping or etching with a mixture of nitric and hydrofluoric acids. Alternatively the Si vapour may be thermally precipitated from SiCl2 under a reducing atmosphere. The epitaxial layer may be doped by evaporating an impurity simultaneously with the coating material.ALSO:<PICT:1108741/C1/1> A method of producing an epitaxial layer of silicon on a silicon substrate comprises bringing vaporized silicon or compound thereof into contact with a liquid phase region produced by alloying the silicon substrate with a metal on a face of the substrate, so that silicon is deposited from the region. The Si, may be alloyed with Au, Ag, Cu, Al, or Sb. In a chamber 3 under a vacuum of e.g. 10-5 mm. Hg a cleaned Si wafer 1 is heated to 500-600 DEG C. by an electric heater 7 and gold from boat 6 evaporated to form a 100</>rA thick layer on the lower face 4 of the wafer, which at this temperature forms a liquid phase alloy. The wafer is raised to 1208 DEG C. and silicon 5 evaporated by electron beam heating by a gun 8 on to the liquid phase surface. The Si is incorporated into the region and is deposited therefrom on to the substrate. The wafer is cooled and the liquid phase region crystallizes and may be removed by lapping or etching with a mixture of nitric and hydrofluoric acids. Alternatively the Si vapour may be thermally precipitated from SiCl2 under a reducing atmosphere. The epitaxial layer may be doped by evaporating an impurity simultaneously with the coating material. |
