| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for etching a copper layer which is arranged so that a metal mask used as a mask for copper layer etching can be maintained, and a high-density pattern and a low-density pattern can be formed in parallel.SOLUTION: A method for etching a copper layer comprises the step of producing plasma of a process gas in a process chamber with an object to be processed loaded therein, provided that the object to be processed has a copper layer and a metal mask provided on the copper layer. The metal mask contains titanium. The process gas contains CHgas, oxygen gas, and inert gas. According to one embodiment, the metal mask may include a layer made of TiN.</p> |
