| 发明名称 |
GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION |
| 摘要 |
In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member. |
| 申请公布号 |
US2015111325(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414480398 |
申请日期 |
2014.09.08 |
| 申请人 |
Soraa Laser Diode, Inc. |
发明人 |
Hsu Po Shan;McLaurin Melvin;Raring James W.;Stzein Alexander;Buller Benyamin |
| 分类号 |
H01S5/028 |
主分类号 |
H01S5/028 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a laser diode device comprising:
providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material; bonding the interface region to a handle substrate; and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member. |
| 地址 |
Goleta CA US |
