NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semiconductor memory device includes first and second word line groups, each including a plurality of stacked word lines above a substrate, a first memory string including a first memory column through the first word line group, a second memory column through the second word line group, and a first memory connection portion electrically coupling the first and second memory columns, and a second memory string including a third memory column through the first word line group, a fourth memory column through the second word line group, and a second memory connection portion electrically coupling the third and fourth memory columns. The first memory connection portion is formed in a first layer of the substrate and the second memory connection portion is formed in a second layer of the substrate that is lower than the first layer.

主权项

1. A nonvolatile semiconductor memory device comprising:
first and second word line groups, each including a plurality of stacked word lines above a substrate; a first memory string including a first memory column through the first word line group, a second memory column through the second word line group, and a first memory connection portion electrically coupling the first and second memory columns; and a second memory string including a third memory column through the first word line group, a fourth memory column through the second word line group, and a second memory connection portion electrically coupling the third and fourth memory columns, wherein the first memory connection portion is formed in a first layer of the substrate and the second memory connection portion is formed in a second layer of the substrate that is lower than the first layer.