RELIABLE PASSIVATION LAYERS FOR SEMICONDUCTOR DEVICES

摘要

Device and method for forming a device are disclosed. A substrate which is prepared with a dielectric layer having a top metal level of the device is provided. The top metal level includes top level conductive lines. A top dielectric layer which includes top via openings in communication with the top level conductive lines is formed over the top metal level. A patterned top conductive layer is formed on the top dielectric layer. The patterned top conductive layer includes a top via in the top via opening and a top conductive line. A first passivation sub-layer is formed to line the patterned conductive layer and exposed top dielectric layer. A plasma treatment is performed on the surface of the first passivation sub-layer to form a nitrided layer. A second passivation sub-layer is formed to line the nitrided layer. The plasma treatment improves the passivation integrity of the passivation stack.

主权项

1. A method for forming a semiconductor device comprising:
providing a substrate, the substrate is prepared with a dielectric layer which includes a top metal level of the device, wherein the top metal level includes top level conductive lines; forming a top dielectric layer over the top metal level, the top dielectric layer includes top via openings in communication with the top level conductive lines; forming a patterned top conductive layer on the top dielectric layer, the patterned top conductive layer includes a top via in the top via opening and a top conductive line; and forming a passivation stack comprising
forming a first passivation sub-layer to line the patterned conductive layer and exposed top dielectric layer,performing a plasma treatment on the surface of the first passivation sub-layer to form a nitrided layer on the first passivation sub-layer, andforming a second passivation sub-layer to line the nitrided layer, wherein the plasma treatment improves the passivation integrity of the passivation stack.