发明名称 PLASMA TREATMENT APPARATUS AND SUBSTRATE TREATMENT SYSTEM
摘要 In a substrate treatment system including multiple treatment chambers around a substrate transfer chamber, an increase in apparatus floor area due to installation of additional treatment chambers is reduced. A plasma treatment apparatus according to one embodiment of the present invention includes: a treatment chamber; a substrate holder for holding the substrate; plasma generation unit for forming plasma; multiple gate valves for installation and removal of the substrate; a shield for surrounding the plasma formed by the plasma generation unit; and substrate transfer unit for transferring the substrate through the gate valves. The substrate transfer unit is shielded from the plasma by the shield.
申请公布号 US2015107516(A1) 申请公布日期 2015.04.23
申请号 US201414501300 申请日期 2014.09.30
申请人 CANON ANELVA CORPORATION 发明人 TSUNEKAWA Koji;NAGAMINE Yoshinori;NAKAJIMA Daisuke
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A substrate treatment system comprising: a substrate transfer chamber for transferring a substrate to a chamber provided therearound; a load lock chamber disposed on an atmosphere side of the substrate transfer chamber and hermetically connected to the substrate transfer chamber; and a plurality of substrate treatment apparatuses provided around the substrate transfer chamber and hermetically connected to the substrate transfer chamber, wherein at least one of the substrate treatment apparatuses is a plasma treatment apparatus, and the plasma treatment apparatus is further hermetically connected to a first substrate treatment apparatus different from the plurality of substrate treatment apparatuses, wherein the plasma treatment apparatus includes: a treatment chamber, a first substrate holder for holding the substrate provided in the treatment chamber, a plasma generation unit for forming plasma in the treatment chamber, a first gate valve for carrying the substrate into and out of the treatment chamber from the substrate transfer chamber, a second gate valve for carrying the substrate into and out of the first substrate treatment apparatus from the treatment chamber, a substrate transfer unit, provided in the treatment chamber, for transferring the substrate inside the treatment chamber and performing at least one of installation and removal of the substrate into and from the treatment chamber through the second gate valve, and a shield for surrounding the plasma formed by the plasma generation unit, the shield being provided so as to shield the substrate transfer unit from the plasma.
地址 Kawasaki-shi JP