| 摘要 |
This semiconductor-element manufacturing method is characterized by having the following steps: a cutting step in which, with the first surface of a wafer attached to a vacuum stage via a pressure differential, said wafer also having a second surface on the opposite side from said first surface and a ring section that is provided at the edge of the wafer and is thicker than the middle of the wafer, laser light is used to cut the ring section away from the rest of the wafer so as to form a flat wafer; an adhering step in which, with the second surface of the flat wafer attached to a vacuum end-effector via a pressure differential, the flat wafer is detached from the vacuum stage and the first surface of the flat wafer is adhered to a dicing tape; and a dicing step in which the flat wafer adhered to the dicing tape is diced. |
