发明名称 ELECTRON MULTIPLYING IMAGE SENSOR AND PIXEL READING ARRANGED IN A GROUP
摘要 The invention relates to image sensors enabling the acquisition of electronic images at very low light level. The image sensor can read pixels individually or by arranging the charges of four adjacent pixels in a group for increased sensitivity. Two photodiodes of a same column (PH21, PH22) can transfer the charges thereof in a same multiplication grid (GM1), the two pixels of the adjacent column transferring the charges thereof in a second multiplication grid (GM2). A multiplication phase can be carried out by an alternation of potentials with opposite phase, applied to the multiplication grids. The reading structures associated each with one of the multiplication grids enable the charges of each one of the four photodiodes or the combined charges of the four photodiodes to be read.
申请公布号 WO2015055501(A1) 申请公布日期 2015.04.23
申请号 WO2014EP71655 申请日期 2014.10.09
申请人 E2V SEMICONDUCTORS 发明人 FEREYRE, PIERRE;MAYER, FRÉDÉRIC
分类号 H04N5/3745;H01L27/146;H04N5/347;H04N5/355 主分类号 H04N5/3745
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