| 摘要 |
A manufacturing method of a semiconductor device is provided to form patterns having a pitch that is the same as the resolution or less of a semiconductor device, by comprising the steps of: preparing patterns having a space that is the same as the resolution or less on a mask layout; forming a number of masks by separating the patterns; letting patterns having a greater space than the resolution on each of the masks; adding a double pattern to one selected from among the masks; and forming semiconductor patterns on the substrate by using the masks and the mask with a double pattern added. |
