| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of appropriately writing data while suppressing an increase in current consumption.SOLUTION: A semiconductor storage device includes: a memory cell array including a plurality of memory cells (MC); a word line decoder controlling selection of a word line (WL) connected to the respective memory cells (MC) and a voltage level; a time-determination-signal generation circuit 130 generating a time determination signal (DT) representing determination time based on which a change in a command /CE is determined; a timing circuit 103 determinING the change in the command /CE from the time determination signal DT, and generating control signals WL-TIM1, WL-TIM2, and WL-TIM3 for controlling whether to precharge a word line (WL). |
