| 发明名称 |
POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION |
| 摘要 |
Provided is a polishing composition used for polishing a semiconductor substrate having a through-silicon via structure, comprising an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less, a silicon polishing accelerating agent, a through-silicon via material polishing speed increasing agent, a silicon contamination preventing agent, and water. |
| 申请公布号 |
US2015111382(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314394412 |
申请日期 |
2013.04.10 |
| 申请人 |
FUJIMI INCORPORATED |
发明人 |
Shinoda Toshio |
| 分类号 |
C09G1/02;H01L21/306 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A polishing composition used for polishing a semiconductor substrate having a through-silicon via structure,
the composition comprising: an oxidizing agent having a standard electrode potential of 350 mV or more and 740 mV or less; a silicon polishing accelerating agent; a through-silicon via material polishing speed increasing agent; a silicon contamination preventing agent; and water. |
| 地址 |
Kiyosu-shi, Aichi JP |
