发明名称 |
Copper Bump Structures Having Sidewall Protection Layers |
摘要 |
A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection |
申请公布号 |
US2015111342(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414579326 |
申请日期 |
2014.12.22 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Jing-Cheng;Hwung Ya-Hsi;Chen Hsin-Yu;Tsai Po-Hao;Lin Yan-Fu;Huang Cheng-Lin;Tsai Fang Wen;Chiou Wen-Chih |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
forming a polymer layer on sidewalls of a conductive bump disposed on a first work piece, the conductive bump comprising a first metal and the polymer layer comprising a polymer material; and forming a protection layer on the sidewalls by curing the polymer layer, wherein the protection layer is a dielectric comprising a compound of the first metal and the polymer material; wherein the conductive bump extends below a bottommost surface of the protection layer; and wherein the protection layer covers the sidewalls of the conductive bump above the work piece, a top surface of the conductive bump being exposed through the protection layer. |
地址 |
Hsin-Chu TW |