发明名称 Copper Bump Structures Having Sidewall Protection Layers
摘要 A work piece includes a copper bump having a top surface and sidewalls. A protection layer is formed on the sidewalls, and not on the top surface, of the copper bump. The protection
申请公布号 US2015111342(A1) 申请公布日期 2015.04.23
申请号 US201414579326 申请日期 2014.12.22
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Jing-Cheng;Hwung Ya-Hsi;Chen Hsin-Yu;Tsai Po-Hao;Lin Yan-Fu;Huang Cheng-Lin;Tsai Fang Wen;Chiou Wen-Chih
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method comprising: forming a polymer layer on sidewalls of a conductive bump disposed on a first work piece, the conductive bump comprising a first metal and the polymer layer comprising a polymer material; and forming a protection layer on the sidewalls by curing the polymer layer, wherein the protection layer is a dielectric comprising a compound of the first metal and the polymer material; wherein the conductive bump extends below a bottommost surface of the protection layer; and wherein the protection layer covers the sidewalls of the conductive bump above the work piece, a top surface of the conductive bump being exposed through the protection layer.
地址 Hsin-Chu TW