发明名称 |
SELF-ALIGNED NANO-STRUCTURES |
摘要 |
A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques. |
申请公布号 |
US2015108658(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414586412 |
申请日期 |
2014.12.30 |
申请人 |
Micron Technology, Inc. |
发明人 |
Sandhu Gurtej |
分类号 |
H01L23/522 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor assembly comprising:
an aperture formed in a dielectric layer; and an additional structure formed in the center and below the aperture, wherein the additional structure is narrower than the width of the aperture and wherein the additional structure has a width of approximately 45 nm or less. |
地址 |
Boise ID US |