| 发明名称 |
Method for Chemically Passivating a Surface of a Product Made of a III-V Semiconductor Material and the Product Obtained by Such a Method |
| 摘要 |
A method for chemically passivating a surface of a product made of a III-V semiconductor material in which a) a P(N) polymer film is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition, without electrochemical assistance, in the solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface. |
| 申请公布号 |
US2015108617(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201214126217 |
申请日期 |
2012.06.12 |
| 申请人 |
Hervagault Francoise;Le Floch Elaine;Le Floch Clemence;Le Floch Paul |
发明人 |
Etcheberry Arnaud;Goncalves Anne-Marie;Mathieu Charles;Vigneron Jacky;Mezailles Nicolas;Le Floch Pascal |
| 分类号 |
H01L21/322;H01L29/06;H01L21/02 |
主分类号 |
H01L21/322 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for chemically passivating a surface of a product made of a HEN semiconductor material in which a) a P,N polymer film is formed on said surface by deposition in a solvent comprising liquid ammonia,
characterized in that said film is formed by deposition, without electrochemical assistance, in said solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface. |
| 地址 |
US |
