发明名称 |
Source/Drain Structure of Semiconductor Device |
摘要 |
The disclosure relates to a semiconductor device. An exemplary structure for a field effect transistor comprises a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining one side of the gate stack; a shallow trench isolations (STI) region disposed on the side of the gate stack, wherein the STI region is within the substrate; and a source/drain (S/D) structure distributed between the gate stack and STI region, wherein the S/D structure comprises a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a S/D extension disposed between the substrate and strained material, wherein the S/D extension comprises a portion extending below the spacer and substantially vertical to the major surface. |
申请公布号 |
US2015108543(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414579247 |
申请日期 |
2014.12.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Xiao Ying |
分类号 |
H01L29/78;H01L29/26;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A field effect transistor comprising:
a substrate comprising a major surface and a cavity below the major surface; a gate stack on the major surface of the substrate; a spacer adjoining at least one side of the gate stack; a shallow trench isolation (STI) region disposed on the side of the gate stack, wherein the STI region is within the substrate; and a source/drain (S/D) structure distributed between the gate stack and STI region, wherein the S/D structure comprises: a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; and a S/D extension disposed between the substrate and strained material, wherein the S/D extension comprises a portion extending below the spacer and substantially vertical to the major surface. |
地址 |
Hsin-Chu TW |