发明名称 LED LAMPS
摘要 A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.
申请公布号 US2015108522(A1) 申请公布日期 2015.04.23
申请号 US201414504222 申请日期 2014.10.01
申请人 Epistar Corporation 发明人 SALAM Hassan P.A.
分类号 H01L33/38;H01L33/60 主分类号 H01L33/38
代理机构 代理人
主权项 1. A light-emitting device, comprising: a first semiconductor layer; a terminal formed on the first semiconductor layer and having a first edge, a first side and a second side opposite to the first side; and a second semiconductor layer facing the first side and the second side, and having a second edge and a third edge substantially aligned with the first edge.
地址 Hsinchu TW