| 发明名称 |
Semiconductor Device and Method of Manufacturing the Same |
| 摘要 |
A semiconductor device comprises a semiconductor body of a first semiconductor material, wherein at least a part of the semiconductor body constitutes a drift zone of a first conductivity type. The semiconductor device further comprises a channel layer structure comprising a semiconductor heterojunction between first and second semiconductor layers electrically coupled to the drift zone. The first and second semiconductor layers include semiconductor materials that are different to the first semiconductor material. |
| 申请公布号 |
US2015108500(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314057532 |
申请日期 |
2013.10.18 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Irsigler Peter;Schulze Hans-Joachim |
| 分类号 |
H01L29/778;H01L29/66;H01L29/10;H01L29/16 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body of a first semiconductor material, wherein at least a part of the semiconductor body constitutes a drift zone of a first conductivity type; and a channel layer structure comprising a semiconductor heterojunction between first and second semiconductor layers electrically coupled to the drift zone, the first and second semiconductor layers including semiconductor materials that are different to the first semiconductor material. |
| 地址 |
Villach AT |
