发明名称 |
Method to Remove Sapphire Substrate |
摘要 |
A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching. |
申请公布号 |
US2015108424(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201314057053 |
申请日期 |
2013.10.18 |
申请人 |
TSMC Solid State Lighting Ltd. |
发明人 |
Huang Hung-Wen;Hsia Hsing-Kuo;Chiu Ching-Hua |
分类号 |
H01L33/00;H01L33/22;H01L33/06 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode (LED), comprising:
a substrate; a conductive layer disposed over the substrate; a first doped semiconductor layer disposed over the conductive layer, the first doped semiconductor layer having a first type of conductivity; an active layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the active layer, the second doped semiconductor layer having a second type of conductivity different from the first type; an undoped buffer layer disposed over the second doped semiconductor layer, wherein the undoped buffer layer includes an opening that exposes a roughened surface of the second doped semiconductor layer; and a plurality of conductive elements disposed within the opening and over the second doped semiconductor layer. |
地址 |
Hsinchu TW |