发明名称 Method to Remove Sapphire Substrate
摘要 A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first specified thickness using a single abrasive or multiple abrasives. The remaining sapphire substrate is removed by dry etching or wet etching.
申请公布号 US2015108424(A1) 申请公布日期 2015.04.23
申请号 US201314057053 申请日期 2013.10.18
申请人 TSMC Solid State Lighting Ltd. 发明人 Huang Hung-Wen;Hsia Hsing-Kuo;Chiu Ching-Hua
分类号 H01L33/00;H01L33/22;H01L33/06 主分类号 H01L33/00
代理机构 代理人
主权项 1. A light-emitting diode (LED), comprising: a substrate; a conductive layer disposed over the substrate; a first doped semiconductor layer disposed over the conductive layer, the first doped semiconductor layer having a first type of conductivity; an active layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the active layer, the second doped semiconductor layer having a second type of conductivity different from the first type; an undoped buffer layer disposed over the second doped semiconductor layer, wherein the undoped buffer layer includes an opening that exposes a roughened surface of the second doped semiconductor layer; and a plurality of conductive elements disposed within the opening and over the second doped semiconductor layer.
地址 Hsinchu TW