| 发明名称 |
RESISTANCE CHANGE ELEMENT AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
According to one embodiment, a resistance change element includes: a first electrode; a second electrode; and a resistance change film provided between the first electrode and the second electrode, and the resistance change film including: a first transition metal oxide-containing layer; a second transition metal oxide-containing layer; and an intermediate layer provided between the first transition metal oxide-containing layer and the second transition metal oxide-containing layer, the intermediate layer having a higher crystallization temperature than the first transition metal oxide-containing layer and the second transition metal oxide-containing layer, and the intermediate layer including an amorphous material. |
| 申请公布号 |
US2015108420(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414188892 |
申请日期 |
2014.02.25 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ODE Hiroyuki;YAMAGUCHI Takeshi;YAMATO Masaki;KOBAYASHI Shigeki;NAKAKUBO Yoshinori |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistance change element comprising:
a first electrode; a second electrode; and a resistance change film provided between the first electrode and the second electrode, and the resistance change film including:
a first transition metal oxide-containing layer;a second transition metal oxide-containing layer; andan intermediate layer provided between the first transition metal oxide-containing layer and the second transition metal oxide-containing layer, the intermediate layer having a higher crystallization temperature than the first transition metal oxide-containing layer and the second transition metal oxide-containing layer, and the intermediate layer including an amorphous material. |
| 地址 |
Tokyo JP |
