| 发明名称 |
SYSTEMS AND METHODS FOR A THIN FILM CAPACITOR HAVING A COMPOSITE HIGH-K THIN FILM STACK |
| 摘要 |
Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor. |
| 申请公布号 |
US2015108083(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414495489 |
申请日期 |
2014.09.24 |
| 申请人 |
BlackBerry Limited |
发明人 |
Zelner Marina;Capanu Mircea;Nagy Susan C. |
| 分类号 |
H01G4/33 |
主分类号 |
H01G4/33 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a thin film capacitor, the method comprising:
depositing an electrode layer of conductive material on a substrate material; depositing a first layer of ferroelectric material on the electrode layer utilizing a first process that forms a randomly-oriented grain structure; depositing a second layer of ferroelectric material on the first layer of ferroelectric material using a second process that forms a columnar-oriented grain structure; and depositing a metal interconnect layer to provide electric connections for the thin film capacitor. |
| 地址 |
Waterloo CA |
