| 摘要 |
This invention relates to a RF and mm-wave frequency power detector used for the power detection of the transferred signal in high frequency transmitter, receiver and/or transceiver. This invention increases the sensitivity of the power detector even for a very high frequency application. It also extends the dynamic range and improves accuracy due to the suppress of the process, voltage, temperature variations. The peak detector circuit comprises a first output (vsigB) coupled to ground by a first load at terminal common emitter of a first and second switching device. A second output (vrefB) is coupled to ground by a second load at terminal common emitter of a third and fourth switching device. A third output (vsigT) is coupled to a supply voltage node by a third load at terminal common collector of the first and second switching device. A fourth output (vrefT) is coupled to the supply voltage node by a fourth load at terminal common collector of the third and fourth switching device. The first, second, third, and fourth switching devices have respective control terminals which are biased with a common bias voltage (vb). The first, second, third and fourth load are selected so that R1=R2=αf*R3=αf R4, with R1, R2, R3, R4 a resistance of said first, second, third and fourth load, respectively, and αf a common-base current gain of the switching devices. |
