| 摘要 |
<p>A non-volatile memory utilizes multiple programming cycles to write units of data, such as a logical page of data, to a non-volatile memory array. User data is evaluated before writing to determine whether programming can be skipped for bay addresses. Whether programming can be skipped for an initial set of bay groups is determined. If a bay group cannot be skipped, the system determines whether the bay group includes individual bays that may be skipped. Bays are regrouped into new bay groups to reduce the number of BAD cycles during programming. Independent column addressing for multiple bays within a bay group is provided. During a column address cycle, a separate column address is provided to the bays to select different columns for programming within each bay. By simultaneously programming multiple column addresses during a single column address cycle, the system may skip programming for some column address cycles.</p> |
