| 摘要 |
<p>Provided are a FinFET and a method of manufacturing same. The method comprises: providing a substrate (101); forming a fin (102) on the substrate (101), the width of the fin (102) being greater than a predetermined width of a channel; performing shallow trench isolation; forming a pseudo-gate stack (200) above the channel, and forming a source/drain region; depositing an interlayer dielectric layer (105), performing planarization, and exposing the pseudo-gate stack (200); removing the pseudo-gate stack (200) to expose a channel portion; forming an etch stop layer (106) on the top of the channel; thinning the channel along two sides of the channel in a direction perpendicular to a surface on a side of the channel till desired thickness; and removing the etch stop layer (106). The method effectively inhibits a short channel effect of a device, reduces source/drain parasitic capacitance of the device, improves performance of the device, and reduces processing complexity.</p> |
