| 摘要 |
<p>Disclosed is a nitride semiconductor light emitting device using nanomaterials. The nitride semiconductor light emitting device according to the present invention includes a substrate, a light emitting structure which is formed on a first surface of the substrate and includes an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer, a nanomaterial layer which is formed on a second surface of the substrate and includes the nanomaterials with heat conductivity of 10 W/(m·K) or more, and a reflection layer which is formed on the nanomaterial layer.</p> |
