SEMICONDUCTOR DEVICES WITH NON-IMPLANTED BARRIER REGIONS AND METHODS OF FABRICATING SAME

摘要

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact.