| 摘要 |
According to one embodiment, a semiconductor light emitting element (110, 110a, 110b, 111, 112, 113, 113a-113c, 114) includes a first electrode (61), first and second light emitting units (10u), (20u), first and second conductive layers (41), (42), a first connection electrode (51), a first dielectric layer (51 i), first and second pads (41 p), (42p), and a first inter-light emitting unit dielectric layer (71). The first light emitting unit (10u) includes first and second semiconductor layers (11), (12), and a first light emitting layer (10L). The first semiconductor layer (11) includes a first semiconductor portion (11 a) and a second semiconductor portion (11 b). The second light emitting unit (20u) includes a third semiconductor layer (23), a fourth semiconductor layer (24), and a second light emitting layer (20L). The fourth semiconductor layer (24) is electrically connected with the first electrode (61). The first conductive layer (41) is electrically connected with the third semiconductor layer (23). The second conductive layer (42) is electrically connected with the second semiconductor layer (12). The first connection electrode (51) electrically connects the first conductive layer (41) and the first semiconductor portion (11a). |
