| 摘要 |
<p>A quantum dot light emitting device (10) includes; a substrate (12), a first electrode (14) disposed on the substrate (12), a second electrode (22) disposed substantially opposite to the first electrode (14), a first charge transport layer (15) disposed between the first electrode (14) and the second electrode (22), a quantum dot light emitting layer (18) disposed between the first charge transport layer (15) and one of the first electrode (14) and the second electrode (22), and at least one quantum dot including layer (17) disposed between the quantum dot light emitting layer (18) and the first charge transport layer (15), wherein the at least one quantum dot including layer (17) has an energy band level different from an energy band level of the quantum dot light emitting layer (18).</p> |
