| 摘要 |
<p>A metal electrode is used for a pair with a semiconductor so as to sandwich a high-dielectric constant thin film between the metal electrode and the semiconductor. A metal electrode 13 comprises a metal film 11 formed of a first electrode material, and a characteristic control film 10 containing a second electrode material. The characteristic control film 10 is formed between the high-dielectric constant thin film 9 and the metal film 11. C is added to the characteristic control film 10. The addition of C reduces the crystal grain diameter of the material constituting the characteristic control film 10, and suppresses fluctuation of a Vth (threshold voltage).</p> |
