发明名称 結晶製造
摘要 <p>An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.</p>
申请公布号 JP5707040(B2) 申请公布日期 2015.04.22
申请号 JP20090526143 申请日期 2007.08.31
申请人 发明人
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
代理机构 代理人
主权项
地址