发明名称 半導体装置
摘要 <p>A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode.</p>
申请公布号 JP5706092(B2) 申请公布日期 2015.04.22
申请号 JP20100044930 申请日期 2010.03.02
申请人 发明人
分类号 H01L29/786;G02F1/1368;H01L21/28;H01L29/417;H01L29/423;H01L29/49 主分类号 H01L29/786
代理机构 代理人
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