| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method, which can prevent reliability deterioration such as characteristic fluctuation of an element and PN junctional disruption due to stress and the like. <P>SOLUTION: A salicide structure semiconductor device comprises metal silicide layers formed on a high-concentration source/drain region and on a gate electrode surface, each formed of a plurality of islands of metal silicide. Accordingly, stress between a silicon and the metal silicide layer can be more relaxed than a metal silicide layer formed on the whole area, and reliability deterioration such as characteristic fluctuation of an element and PN junctional disruption due to stress and the like between the silicon and the metal silicide layer can be prevented. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
