| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a power semiconductor device with a sense function in which precision of current detection is improved by correcting to reduce deviation of current switch timing or transient characteristics in the main region and the sense region of the power semiconductor device with the sense function by a gate drive circuit. <P>SOLUTION: A gate drive signal output from a gate pulse generation circuit (21) is output to a sense gate terminal Gs and a main gate terminal Gm and an input end of an MPU (24) via each correction resistor of a gate resistance value correction circuit 1 (22) and a gate resistance value correction circuit 2 (23). Correction resistance values of respective gate resistance value correction circuits (22, 23) are determined by measuring the condition either of a power supply voltage value or an element temperature value in addition to a load current value and each gate voltage value at the time of driving, calculating an optimum correction resistance value by the MPU(24) according to the measured condition, or by calling the optimum correction resistance value from a built-in memory and then correcting each gate resistance value. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
